ELECTRON DENSITIES IN InAs-AlSb QUANTUM WELLS.

Abstract

Both single wells and superlattices of InAs-AlSb have been grown by molecular beam epitaxy on GaAs substrates. The measured electron densities were found to depend on the processes used to define the sample geometry. While freshly cleaved samples show increasing electron densities and mobilities with the InAs layer thickness, etched samples give rise to much higher densities with no apparent dependence on the thickness. The discrepancies are believed to be related to the hygroscopic nature of AlSb.