Philippe M. Vereecken, Robert A. Binstead, et al.
IBM J. Res. Dev
Paper
Electrodeposition of bismuth thin films on n-GaAs (110)
Abstract
Bismuth thin films are formed electrochemically on n-GaAs (110). Bismuth films up to a few hundred nanometers in thickness exhibit a strong (018) texture, while thicker films are polycrystalline. The barrier height of the n-GaAsBi Schottky contacts is 0.62 eV, about 0.2 eV lower than for electrodeposited bismuth films on GaAs (100). © 2005 American Institute of Physics.
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