J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Abstract: Vanadium dioxide (VO 2) devices undergo a thermal insulator-metal-transition by current or voltage injection. In this work, we utilize a dedicated Technology Computer-Aided Design (TCAD) modeling approach to simulate thermal-induced resistive switching effects in VO 2 devices. In particular, we investigate how the heat dissipation modulates the VO 2 device behavior. We employ a mixed-mode Simulation Program with Integrated Circuit Emphasis (SPICE)—TCAD approach to simulate the relaxation oscillator circuit based on VO 2 device, and we show the entangled self-oscillatory behavior of temperature and voltage across the device. Our findings provide essential guidelines for the design of VO 2 oscillators to be exploited to realize oscillatory neural networks circuits for neuromorphic computing. Graphical Abstract: [Figure not available: see fulltext.].
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters