Electrical resistivity and Hall effect in Fe-Zr amorphous sputtered films

Abstract

Fe-Zr amorphous films were prepared by a co-sputtering technique, and the electrical resistivity and the Hall effects were investigated. The resistivity ρ at 4.2 K as a function of composition exhibits a broad minimum around 15% Zr, while the magnetization 4πMs indicates a broad maximum at the same composition. The high-field susceptibility dramatically increases below 15% Zr. In the high concentration range the spontaneous Hall coefficient R s and the magnetization 4πMs decrease, while the resistivity increases, and hence the Hall conductivity γH decreases with increasing Zr content. The ordinary Hall coefficient R 0, separated from the spontaneous Hall coefficient Rs, slightly increases with increasing Zr content, showing a positive sign in contrast to that of Co and Ni-base amorphous alloys.