J.P. Bourgoin, M. Johnson, et al.
Applied Physics Letters
Potential distributions across Si(001)p-n junctions have been studied using cross-sectional scanning tunneling microscopy, spectroscopy, and potentiometry. A clear transition between p- and n-type material can be seen across each junction, and variations in the energy of the conduction-band edge can be detected with a spatial resolution of better than 100 Å. Current-voltage characteristics have been measured in both unbiased and electrically biased structures, and measurements under both conditions are consistent with calculated potential distributions.
J.P. Bourgoin, M. Johnson, et al.
Applied Physics Letters
G. Arjavalingam, W. Robertson, et al.
IEE/LEOS Summer Topical Meetings 1991
Y. Pastol, J.-M. Halbout, et al.
Scanning Microscopy
J.D. Crow, L. Comerford, et al.
Proceedings of SPIE 1989