O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Ballistic electron emission microscopy (BEEM) and non-contact atomic force microscopy (NC-AFM) are used to characterize SiO2 and Al2O3 layers grown on Si(1 0 0). The effective conduction band mass and its energy dispersion in SiO2 and an offset between Al2O3 and Si conduction bands of 2.78 eV were obtained with BEEM. NC-AFM was used to image electrons, and in some instances holes, trapped in the oxide layers near the surface and in the bulk of the oxide. Modeling of the tip-surface interaction supports the interpretation of image features arising from a single electron occupying a trap. The polarity of the trapped charge was deduced from Kelvin (potential difference) images that were simultaneously recorded with the topographic images. © 2002 Elsevier Science B.V. All rights reserved.
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997