E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting
Paper
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
Abstract
High-effective mobilities are demonstrated in Al2O3 based n-channel MOSFETs with Al gates. The Al2O3 was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm2/Vs, is found to approach that of SiO2 based MOSFETs at higher fields.
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