Electrical characteristics of ultra-thin multi-layers of poly-Si and silicon dioxide

Abstract

An ultra-thin multi-layer structure of silicon and silicon dioxide has been fabricated by low pressure chemical vapor deposition. High resolution TEM shows alternating layers of 50 angstrom thick SiO2 and polycrystalline Si films were deposited and MOS capacitors using this multilayer dielectric were studied to understand their electrical characteristics. Both I-V and C-V measurements show that the Fowler-Nordheim tunneling current is proportional to the number of polycrystalline layers.