Kai Shum, P.M. Mooney, et al.
Physical Review B - CMMP
The elastic strain relaxation in free standing SiGe/Si structures was investigated. The free-standing Si layers were fabricated supported at a single point by an SiO 2 pedestal and subsequently grew an epitaxial SiGe layer. The measured strain relaxation of the SiGe layer agrees well with that calculated using a force-balance model. Strained Si layers with biaxial tensile strain equal to 0.007 and 0.012.
Kai Shum, P.M. Mooney, et al.
Physical Review B - CMMP
K. Rim, S.J. Koester, et al.
VLSI Technology 2001
F. Legoues, P.M. Mooney, et al.
Applied Physics Letters
J.C. Tsang, P.M. Mooney, et al.
Journal of Applied Physics