Conference paper
Free standing silicon as a compliant substrate for SiGe
G.M. Cohen, P.M. Mooney, et al.
MRS Proceedings 2003
The elastic strain relaxation in free standing SiGe/Si structures was investigated. The free-standing Si layers were fabricated supported at a single point by an SiO 2 pedestal and subsequently grew an epitaxial SiGe layer. The measured strain relaxation of the SiGe layer agrees well with that calculated using a force-balance model. Strained Si layers with biaxial tensile strain equal to 0.007 and 0.012.
G.M. Cohen, P.M. Mooney, et al.
MRS Proceedings 2003
Kai Shum, P.M. Mooney, et al.
Physical Review B - CMMP
M.I. Nathan, S. Tiwari, et al.
Journal of Applied Physics
P.M. Mooney, J.L. Jordan-Sweet, et al.
Physica B: Condensed Matter