Conference paper
Erbium-doped silicon prepared by UHV/CVD
D.B. Beach, R.T. Collins, et al.
MRS Proceedings 1992
The elastic strain relaxation in free standing SiGe/Si structures was investigated. The free-standing Si layers were fabricated supported at a single point by an SiO 2 pedestal and subsequently grew an epitaxial SiGe layer. The measured strain relaxation of the SiGe layer agrees well with that calculated using a force-balance model. Strained Si layers with biaxial tensile strain equal to 0.007 and 0.012.
D.B. Beach, R.T. Collins, et al.
MRS Proceedings 1992
R. Hammond, S.J. Koester, et al.
Electronics Letters
N. Caswell, P.M. Mooney, et al.
Applied Physics Letters
J.C. Tsang, F.H. Dacol, et al.
Applied Physics Letters