D.J. Wolford, J.A. Reimer, et al.
Applied Physics Letters
We report on optical and structural properties of a new class of efficient visible light emitting semiconductors: low-defect-density a-SiHx alloys. Films are prepared by HOMOCVD from silane and RF plasma from disilane. Optical gaps increase monotonically with H incorporation and decreasing substrate temperatures (200-25°C), while spin densities remain low. New broadband luminescence develops in the alloy band tails and shifts to higher energies with the gap. At ∼ 40% H, gaps reach 2.55 eV and yellow-orange PL peaks near 2.05 eV. Efficient PL persists at room temperature. Emission is attributed to band-tail excitons and phonon cooperation. © 1983.
D.J. Wolford, J.A. Reimer, et al.
Applied Physics Letters
B.D. Silverman, B.A. Scott
The Journal of Chemical Physics
G. Northrop, J.F. Morar, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Y. Tomkiewicz, J.B. Torrance, et al.
The Journal of Chemical Physics