B.A. Scott, E.A. Giess, et al.
Materials Research Bulletin
We report on optical and structural properties of a new class of efficient visible light emitting semiconductors: low-defect-density a-SiHx alloys. Films are prepared by HOMOCVD from silane and RF plasma from disilane. Optical gaps increase monotonically with H incorporation and decreasing substrate temperatures (200-25°C), while spin densities remain low. New broadband luminescence develops in the alloy band tails and shifts to higher energies with the gap. At ∼ 40% H, gaps reach 2.55 eV and yellow-orange PL peaks near 2.05 eV. Efficient PL persists at room temperature. Emission is attributed to band-tail excitons and phonon cooperation. © 1983.
B.A. Scott, E.A. Giess, et al.
Materials Research Bulletin
B.D. Silverman, B.A. Scott
The Journal of Chemical Physics
D.J. Wolford, J.A. Bradley, et al.
ICPS Physics of Semiconductors 1984
D.J. Wolford, J.A. Reimer, et al.
Applied Physics Letters