A.W. Kleinsasser, T.N. Jackson, et al.
IEEE Transactions on Magnetics
The light-emitting diodes described in this Letter differ from standard type diodes insofar as the amphoteric dopant Si is the dominant impurity on both sides of the junction. The p-n junction is completely solution regrown. The highly compensated p region gives rise to a wide active region up to 50 μ in width. The interesting feature of these diodes is their high external quantum efficiencies at 300°K. Values up to 6% have been measured on diodes, when an antireflecting coat has been applied. © 1966 The American Institute of Physics.
A.W. Kleinsasser, T.N. Jackson, et al.
IEEE Transactions on Magnetics
A. Bond, P. Parayanthal, et al.
Cambridge Symposium 1983
D.D. Nolte, M.R. Melloch, et al.
Applied Physics Letters
M.H. Pilkuhn, H. Rupprecht
Proceedings of the IEEE