J.F. Graczyk, P. Chaudhari
physica status solidi (b)
We have investigated the structure of amorphous Ge films with 10-keV Ge74 ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion-implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network.
J.F. Graczyk, P. Chaudhari
physica status solidi (b)
S.R. Herd, P. Chaudhari, et al.
Journal of Non-Crystalline Solids
K.N. Tu, P. Chaudhari, et al.
Journal of Applied Physics
P. Chaudhari, J. Mannhart, et al.
Physical Review Letters