A. Mansour, R.O. Hilleke, et al.
Physica B: Physics of Condensed Matter
We have investigated the structure of amorphous Ge films with 10-keV Ge74 ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion-implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network.