Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profiles of the observed traps have been determined, and their annealing behaviour is studied up to 200°C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related defect complexes is proposed. © 1989.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
David B. Mitzi
Journal of Materials Chemistry
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Imran Nasim, Melanie Weber
SCML 2024