R. Ghez, M.B. Small
JES
Ion beam etching and deposition are normally carried out with beam, target and substrate potentials near ground potential. In this paper, the effects of intentional or unintentional changes in these potentials are described. Examples include beam neutralization, a single extraction grid, substrate bias, and target bias. Each example is described in terms of beam plasma parameters. © 1982.
R. Ghez, M.B. Small
JES
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