William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
It has been known that silicon atoms can diffuse out through a gold film and accumulate on the top surface at low temperatures. To investigate the effect of this phenomenon on the silicide formation kinetics, a gold layer was deposited between a platinum layer and a silicon layer. After annealing, the progress of silicide formation was probed with Rutherford backscattering spectrometry. It was found that the PtSi formation rate is greatly enhanced by a gold film while the Pt2Si formation rate shows little changes. These are explained in terms of different dominant diffusing species during the formation of silicides. © 1987, American Vacuum Society. All rights reserved.
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
A. Reisman, M. Berkenblit, et al.
JES
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures