Effect of heat treatments on the electrical resistivity of polycrystalline silicon films implanted with antimony

Abstract

Polycrystalline silicon films, ion implanted with antimony to a dose of 1-3×1015/cm2 at an energy of 100 keV, were heat treated by means of rapid thermal or conventional furnace techniques. It was found that the electrical resistivity is a function of time, reaching a minimum value that is relatively lower at 600 than 900°C for heat treatment times that are short enough to avoid significant lattice diffusion, and then increasing with time. However, in cases where longer times at high temperatures (between 860 and 975°C) are used in order to provide sufficient atom movement, the resistivity increases with decrease in temperature. The results are explained on the basis of recrystallization, diffusion, and segregation processes.