S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Impurities and structural defects have a strong influence on the kinetics of thin film reactions. The authors have investigated the effect of Cu on the kinetics of formation and microstructure of Al//3Ti in the temperature range of 375 degree -450 degree C. They found that the presence of 1 weight percent Cu in the Al changes both the activation energy and the pre-exponential factor of the growth law. At the same time, the Cu influences the microstructure of the growing Al//3Ti phase and smoothens the reaction interface. The results are discussed in terms of possible diffusion mechanisms in Al//3Ti.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Ellen J. Yoffa, David Adler
Physical Review B