Effect of a transverse magnetic field on the tunnel current through thick and low semiconductor barriers

Abstract

The influence of a transverse magnetic field on tunnelling through GaAs/AlGaxAs/GaAs heterostructures is investigated theoretically and experimentally. The effect is quite significant for the very thick and low barriers studied. It provides a simple way to determine the barrier transversal time introduced by Stevens, as well as Büttiker and Landauer, from a purely static measurement. © 1987 IOP Publishing Ltd.