Sung Ho Kim, Oun-Ho Park, et al.
Small
The surface electronic structure of Cu on stepped and flat W(110) is determined with inverse photoemission. An intense, Cu-induced surface state is found at 0.6 eV above the Fermi level on W(110). It is located in the 1 band gap. On the stepped W(331) surface there is a similar state at 0.7 eV. This terrace state shifts down to 0.3 eV when the coverage of Cu is reduced such that only a single row of Cu atoms remains at a step edge. © 1994 The American Physical Society.
Sung Ho Kim, Oun-Ho Park, et al.
Small
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011