Bipin Rajendran, Rohit S. Shenoy, et al.
IEEE Transactions on Electron Devices
Paper
Dynamic resistance - A metric for variability characterization of phase-change memory
Abstract
The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells. © 2009 IEEE.
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