Irem Boybat, Manuel Le Gallo, et al.
NVMTS 2017
The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells. © 2009 IEEE.
Irem Boybat, Manuel Le Gallo, et al.
NVMTS 2017
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VLSI-TSA 2012
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