PublicationIEEE SOI 2006Conference paperDouble-gate FET technology for RF applications: Device characteristics and low noise amplifier designIEEE SOI 2006View publicationAbstractNo abstract available.Home↳ PublicationsDate02 Oct 2006PublicationIEEE SOI 2006AuthorsKaran BhatiaKeunwoo KimChing-Te ChuangElyse RosenbaumJean-Olivier PlouchartBrian A. FloydIBM-affiliated at time of publicationShare