Philipp M. Wolf, Eduardo Pitthan, et al.
Small
A dopant-segregation technique for junction engineering has been demonstrated on trigate transistors using a process flow that does not include raised source/drain epitaxy. It is shown that the dopant-segregation technique reduces the off-state leakage current and improves the on-state performance for NFET devices when compared with control devices built using conventional junction engineering. The dopant-segregation process has no observable impact on PFET device performance. © 1980-2012 IEEE.
Philipp M. Wolf, Eduardo Pitthan, et al.
Small
Zhen Zhang, Joanna Atkin, et al.
IEEE T-ED
Da Zhang, Xindong Gao, et al.
Applied Physics Letters
Kangguo Cheng, A. Khakifirooz, et al.
VLSI Circuits 2011