DOPANT INCORPORATION PROCESSES IN SILICON GROWN BY MOLECULAR BEAM EPITAXY.

Abstract

Silicon Molecular Beam Epitaxy (Si MBE) is now being widely considered as a technique to achieve high quality epitaxial films with extremely well controlled doping profiles. It is found that the doping processes for the commonly used dopants in Si MBE are quite complex. In this paper authors extend the results of those observations to develop a generalized theory of dopant incorporation and point out the capabilities and limitations of the process and also discuss the implications on crystal quality.