Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Smeared transitions into low-T domain states are evidenced by linear birefringence measured on Srl-xCaxTiO3 at all concentrations, ˂0.002˂x˂0.058. Sharp E vs T peaks, as observed for x 0.016, may be explained by domains having nearly sample size. The local disorder due t o the Ca2+-induced random fields may pa rtially be removed by a uniform external electric field. © 1988, Taylor & Francis Group, LLC. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Hiroshi Ito, Reinhold Schwalm
JES