Dislocated epitaxial islands

Abstract

CoSi2 islands grown epitaxially on Si are investigated based on dislocation networks observed in these islands. The results are compared with dislocation-dynamics calculations which make use of the phenomenon that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions. It is shown that agreement in the results can be achieved, demonstrating that this approach can be used to study dislocations in other mesostructures.