Discrete and planar monolithic structures of III-IV compounds and alloys

Abstract

Progress in the state-of-the-art of the fabrication of discrete and planar monolithic structures in III-V semiconductor compounds and alloys will be presented. Devices made by diffusion and grown-diffusion techniques on Ga1-xAlxAs, GaAs1-xPx, and GaP will be discussed with emphasis on planar device structures. In addition, a comparison of the contacts from various metallurgies used on these materials will be discussed. © 1973.