B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Progress in the state-of-the-art of the fabrication of discrete and planar monolithic structures in III-V semiconductor compounds and alloys will be presented. Devices made by diffusion and grown-diffusion techniques on Ga1-xAlxAs, GaAs1-xPx, and GaP will be discussed with emphasis on planar device structures. In addition, a comparison of the contacts from various metallurgies used on these materials will be discussed. © 1973.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
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