J.A. Cairns, J.E.E. Baglin, et al.
Journal of Catalysis
The theoretical description of transistors has been impeded by the lack of knowledge of the p-type impurity distributions. A method is described which accurately gives concentration profiles of the boron p-type regions in transistors. The technique has been used to establish that the base regions in the fastest bipolar transistors are markedly different than usually assumed. © 1972 The American Institute of Physics.
J.A. Cairns, J.E.E. Baglin, et al.
Journal of Catalysis
J.F. Ziegler, C.P. Wu, et al.
Nuclear Instruments and Methods
J.E.E. Baglin, C.T. Rettner, et al.
SPIE Optical Science and Technology 2001
J.E.E. Baglin, H.A. Atwater, et al.
Thin Solid Films