Jerzy Kanicki, D. Jousse
IEEE Electron Device Letters
We report on the investigation of the silicon nitride/hydrogenated amorphous silicon interface by capacitance measurements. We observe that the "slow" interface states are located inside the silicon nitride layer, while the energy distribution of the "fast" interface states is peaked at 0.7 eV below the hydrogenated amorphous silicon conduction band with an integrated value of 2×1011 cm-2.
Jerzy Kanicki, D. Jousse
IEEE Electron Device Letters
W.L. Warren, Jerzy Kanicki, et al.
MRS Proceedings 1992
P. Lenahan, D.T. Krick, et al.
Applied Surface Science
Frank R. Libsch, Jerzy Kanicki
SSDM 1992