PaperThin-oxide dual-electron-injector annealing studies using conductivity and electron energy-loss spectroscopyL. Dori, J. Bruley, et al.Journal of Applied Physics
Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. Narayanan, V.K. Paruchuri, et al.VLSI Technology 2006
PaperElectron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interfaceP.E. Batson, K.L. Kavanagh, et al.Physical Review Letters
