Local and global stress distributions in BEOL metallization
I.C. Noyan, E. Liniger, et al.
MRS Spring Meeting 1996
Measurement of diode photocurrent represents a new method for obtaining extended x-ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum-on-GaAs Schottky diode have been used to demonstrate this new technique. The spectra observed in the diode current arise mainly from x-ray absorption events within 2 μm of the diode junction, i.e., within a minority carrier diffusion length of the approximately 600-Å-wide depletion region. The diode current EXAFS are consistent with EXAFS obtained from fluorescence measurements.
I.C. Noyan, E. Liniger, et al.
MRS Spring Meeting 1996
R.F. Boehme, S.J. La Placa
Physical Review Letters
J.E. Demuth, N.J. Dinardo, et al.
Physical Review Letters
A. Erbil, W. Weber, et al.
Physical Review B