DIFFUSION OF ION-IMPLANTED BORON AND PHOSPHORUS DURING RAPID THERMAL ANNEALING OF SILICON.

Abstract

The diffusion behavior of ion-implanted boron and phosphorus in silicon during rapid thermal annealing has been studied. For low dose (1. 0 multiplied by 10**1**4 cm** minus **2) B** plus and P** plus implanted Si, the author first observe a profile redistribution at 850-900 degree C for annealing times of 10 sec. It is then temperature independent in the range 900-1100 degree C. This initial redistribution is much more rapid than conventional diffusion coefficient data would predict. For high dose (2. 0 multiplied by 10**1**5 cm** minus **2) P** plus implanted and short time (10 sec) annealed Si, the dopant profile broadening is strongly temperature dependent. In this case, the experimental profiles are in agreement with concentration enhanced diffusion profiles.