Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Ta thin films were grown by PE ALD on Si surfaces and the diffusion barrier properties of ALD Ta were measured by three in situ techniques. The ALD Ta films have 70-100°C higher failure temperatures in the 2-25 nm thickness region compared to PVD Ta films. This enhancement of failure temperature for ALD Ta was more prominent for the thinner films.
T.N. Morgan
Semiconductor Science and Technology
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Peter J. Price
Surface Science