Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition

Abstract

Ta thin films were grown by PE ALD on Si surfaces and the diffusion barrier properties of ALD Ta were measured by three in situ techniques. The ALD Ta films have 70-100°C higher failure temperatures in the 2-25 nm thickness region compared to PVD Ta films. This enhancement of failure temperature for ALD Ta was more prominent for the thinner films.