Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Long wavelength interface optical phonons measured by HREELS are used to characterize interfaces between different dielectric materials. Four cases are presented: (1) a diffuse interface SiO2Si(100); (2) an epitaxial abrupt interface: CaF2Si(111); (3) an epitaxial reactive interface: AlSbSb(111); (4) an epitaxial periodic interface in a GaAsAlGaAs superlattice. Complementary information about the chemical structure of the first three interfaces is given by synchrotron radiation induced photoemission. © 1990.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films