Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Diffuse and abrupt interface formation studied by high resolution electron energy loss spectroscopy
Abstract
Long wavelength interface optical phonons measured by HREELS are used to characterize interfaces between different dielectric materials. Four cases are presented: (1) a diffuse interface SiO2Si(100); (2) an epitaxial abrupt interface: CaF2Si(111); (3) an epitaxial reactive interface: AlSbSb(111); (4) an epitaxial periodic interface in a GaAsAlGaAs superlattice. Complementary information about the chemical structure of the first three interfaces is given by synchrotron radiation induced photoemission. © 1990.