E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Long wavelength interface optical phonons measured by HREELS are used to characterize interfaces between different dielectric materials. Four cases are presented: (1) a diffuse interface SiO2Si(100); (2) an epitaxial abrupt interface: CaF2Si(111); (3) an epitaxial reactive interface: AlSbSb(111); (4) an epitaxial periodic interface in a GaAsAlGaAs superlattice. Complementary information about the chemical structure of the first three interfaces is given by synchrotron radiation induced photoemission. © 1990.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
T.N. Morgan
Semiconductor Science and Technology