Publication
SPIE Photomask Technology 2003
Conference paper

Development of a new PSM film system for 157 nm extensible to high transmission 193 nm lithography

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Abstract

A new attenuated phase shifting film system for 157 nm lithography is presented. Development was done in cooperation between IBM Research Division in Yorktown-Heights and Schott Lithotec in Meiningen. The 157 nm system is designed for 6% transmission but is tunable to higher values. The film system is extensible to be used as a high transmission phase shifter for 193 nm lithography. The presented theoretical film calculations and design are based on VUV Ellipsometer dispersion and transmission data measured at IBM. Tests for laser stability and chemical durability were carried out by IBM and show good performance. First results of defect density and phase and transmission uniformity are presented.