D.J. DiMaria, J.H. Stathis
Applied Physics Letters
Impurities initially present on a Si surface can be detected using the photo I-V technique. An Al impurity deposited to a thickness less than 8 Å on a silicon substrate which was subsequently oxidized, capped by a chemically vapor deposited (CVD) SiO2 layer, and incorporated into a capacitor structure with an Al gate electrode was found mostly near the interface between the thermal and CVD oxides using the photo I-V technique. This impurity layer which was probably converted to Al2O3 showed greatly enhanced electron trapping compared to either oxide layer.
D.J. DiMaria, J.H. Stathis
Applied Physics Letters
P. Braunlich, S.C. Jones, et al.
SPIE Laser-Induced Damage in Optical Materials 1989
J.M. Aitken, D.R. Young
IEEE TNS
D.J. DiMaria
Journal of Applied Physics