P. Braunlich, S.C. Jones, et al.
SPIE Laser-Induced Damage in Optical Materials 1989
Impurities initially present on a Si surface can be detected using the photo I-V technique. An Al impurity deposited to a thickness less than 8 Å on a silicon substrate which was subsequently oxidized, capped by a chemically vapor deposited (CVD) SiO2 layer, and incorporated into a capacitor structure with an Al gate electrode was found mostly near the interface between the thermal and CVD oxides using the photo I-V technique. This impurity layer which was probably converted to Al2O3 showed greatly enhanced electron trapping compared to either oxide layer.
P. Braunlich, S.C. Jones, et al.
SPIE Laser-Induced Damage in Optical Materials 1989
D.J. DiMaria, E. Cartier, et al.
Journal of Applied Physics
A. Hartstein, Z.A. Weinberg, et al.
Physical Review B
D.J. DiMaria, K.M. DeMeyer, et al.
Journal of Applied Physics