Ian L. Sanders, William J. Kabelac, et al.
IEEE Transactions on Magnetics
A destructive readout (DRO) detector structure for ion-implanted bubble devices employing a current activated expander is described. The design has been evaluated using 1 -μm diameter bubbles, in devices with a storage cell area of 18 μm2. Bias field margins of ~10 percent are achieved and are compatible with other components on the chip. The detector has been operated at drive field frequencies between 100 and 400 kHz, and over a temperature range of 30°C to 80°C. Results show that the device can be operated over a reasonable temperature range without recourse to temperature tracking of the control currents. Signal sensitivities of 3 mV/mA are reported, and experimental data show that signal levels of 4 mV/mA (or 12 mV assuming nominal operating conditions) are quite feasible by reducing the spacing between the sensor element and the garnet film. Signal amplitude is independent of chip temperature during normal operation. © 1984 IEEE
Ian L. Sanders, William J. Kabelac, et al.
IEEE Transactions on Magnetics
Ching-Cheng Shir, Ian L. Sanders, et al.
IEEE Transactions on Magnetics
Ian L. Sanders, Mark H. Kryder
Journal of Applied Physics
Ian L. Sanders, William J. Kabelac, et al.
IEEE Transactions on Magnetics