I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
The recombination time of photoexcited carriers is measured by picosecond luminescence experiments in a GaAs/Ga1-xAlxAs modulation-doped quantum well at low temperature. The electron density is varied in the 0-3×1011 cm-2 range by the use of a Schottky gate. These results, combined with a measurement of the variation of the photoluminescence efficiency, evidence a decrease of the radiative rate and an increase of the nonradiative rate with increasing electron density. © 1989 The American Physical Society.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
K.A. Chao
Physical Review B
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SPIE Advanced Lithography 2008
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Chemistry of Materials