Conference paper
Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Quantum wells of GaSb/InAs/GaSb have been prepared by molecular beam epitaxy (MBE) with emphasis on the correlation of the growth parameters with their electronic properties as characterized by magnetotransport measurements. An electron mobility of 3.5 × 105 cm2/V s has been obtained for the first time in the presence of holes. The holes disappear at a critical InAs thickness around 60 Å resulting from a semimetal-semiconductor transition. © 1986.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
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