L.J. Schowalter, J.R. Jimenez, et al.
Journal of Crystal Growth
The first operational bipolar inversion-channel field-effect transistors (BICFET’s) based on the GexSi1-x/Si system have been successfully demonstrated. The 300 K current gain of β = 365 at a current density of Jc= 2.5 x 104A/cm2 is believed to be the highest value reported for any BICFET to date. The use of a double-heterojunction inversion channel eliminates the collector offset voltage. The present devices are limited by the channel resistance, so that performance improvements are expected for laterally scaled-down devices. © 1989 IEEE
L.J. Schowalter, J.R. Jimenez, et al.
Journal of Crystal Growth
D. Joussej, S.L. Delage, et al.
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
J.C. Tsang, K. Eberl, et al.
Applied Physics Letters
Z.H. Ming, Y.L. Soo, et al.
Applied Physics Letters