Effects of growth direction on sige/si heteroepitaxy
T.S. Kuan, Subramanian S. Iyer
SPIE Advances in Semiconductors and Superconductors 1990
The first operational bipolar inversion-channel field-effect transistors (BICFET’s) based on the GexSi1-x/Si system have been successfully demonstrated. The 300 K current gain of β = 365 at a current density of Jc= 2.5 x 104A/cm2 is believed to be the highest value reported for any BICFET to date. The use of a double-heterojunction inversion channel eliminates the collector offset voltage. The present devices are limited by the channel resistance, so that performance improvements are expected for laterally scaled-down devices. © 1989 IEEE
T.S. Kuan, Subramanian S. Iyer
SPIE Advances in Semiconductors and Superconductors 1990
Y. Komem, M. Arienzo, et al.
Applied Physics Letters
F. Edelman, Y. Komem, et al.
Thin Solid Films
Ulf Gennser, V.P. Kesan, et al.
Journal of Electronic Materials