Degradation of GaAs and Ga_1-xAl_xAs light emitting diodes

Abstract

Life test data on the degradation characteristics of GaAs and GaAlAs light emitting diodes are presented. The GaAs data show the effects of diode processing and impurity concentration on degradation. The AlGaAs diodes prepared during the early stages of their development were tested at various current densities and aged up to 14,000 hours.