H.J. Hovel
IEEE International SOI Conference 1997
Evidence is presented to show that the degradation of near-band-gap photoluminescence emission in GaAs with time of exposure to low power, cw laser excitation can be attributed to a surface mechanism that is independent of surface oxidation and may involve an interaction between crystal point defects and the photogenerated electron-hole plasma near the surface.
H.J. Hovel
IEEE International SOI Conference 1997
Haizhou Yin, Z. Ren, et al.
ICSICT 2006
H.J. Hovel
JES
D.K. Sadana, H.J. Hovel, et al.
IEEE International SOI Conference 1993