Defects in amorphous hydrogenated silicon nitride films

Jerzy Kanicki; W.L. Warren

doi:10.1016/0022-3093(93)91180-B

Journal of Non-Crystalline Solids

Paper

02 Dec 1993

Defects in amorphous hydrogenated silicon nitride films

View publication

Abstract

In this paper we review the structural identification and electronic properties of the K- and N-centers, and positive charges in as-deposited and UV-illuminated amorphous silicon nitride thin films. © 1993.

Paper

Growth instability in diffusion controlled polymerization

J.H. Kaufman, Owen R. Melroy, et al.

Synthetic Metals

Paper

Directed assembly of lamellae-forming block copolymers by using chemically and topographically patterned substrates

Sang-Min Park, Mark P. Stoykovich, et al.

Advanced Materials

Paper

Electronic Spectra and Structure of Bis(ethylene-1,2-dithiolato)nickel and Bis(propene-3-thione-1-thiolato)nickel

Zelek S. Herman, Robert F. Kirchner, et al.

Inorganic Chemistry

Paper

The DX centre

T.N. Morgan

Semiconductor Science and Technology

View all publications

Abstract

Related

Growth instability in diffusion controlled polymerization

Directed assembly of lamellae-forming block copolymers by using chemically and topographically patterned substrates

Electronic Spectra and Structure of Bis(ethylene-1,2-dithiolato)nickel and Bis(propene-3-thione-1-thiolato)nickel

The DX centre