Defect Formation in LiF by Low Energy Ion Implantation

Abstract

The defect formation is studied in LiF by 100 to 290 keV 1H, 4He, 11B, 16O, and 20Ne ion implantation. Room temperature optical absorption is used to study the F‐center aggregates as well as colloid formation. 2 K optical absorption is performed to analyse the zero phonon lines (ZPL) associated with the higher aggregates. The induced damage versus the ion mass, energy, and dose is studied. The influence of impurities such as Ni and Co, as well as pre‐existing defects due to γ irradiation is analysed. It is observed that the induced damage decreases as the implanted ion mas increases and that negatively charged aggregates such as R' and M' are not formed by ion implantation. Copyright © 1985 WILEY‐VCH Verlag GmbH & Co. KGaA