S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
We treat in the spherical-band approximation the problem of a hole in the valence band of a cubic semiconductor bound to a short-range potential. We derive the set of band states in k space which simultaneously diagonalize the energy and angular momentum operators and which provide a convenient basis for the solution of any bound-hole problem having spherical or approximately spherical symmetry. The bound-state wave functions are obtained in this basis (as well as in r space) and are used to obtain the reduction of the shear deformation potential and of the isotropic g factor for the bound relative to the band-edge states. These reduction factors lie between 1.0 and 0.2 and are found to be independent of the depth of the state and to be functions of only the light-hole-heavy-hole mass ratio of the valence bands. © 1975 The American Physical Society.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Lawrence Suchow, Norman R. Stemple
JES
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures