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Applied Physics Letters
Paper

Decomposition of interfacial SiO2 during HfO2 deposition

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Abstract

The removal of interfacial silicon dioxide due to the growth of HfO 2 by Hf deposition in an oxidizing ambient was investigated. The involvement of oxygen transport through HfO2 layer was shown by medium-energy ion scattering results. Oxygen vacancy reactions were held responsible for the temperature dependence of silica reduction.

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Applied Physics Letters

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