R.M. Tromp, M. Mankos, et al.
Surface Review and Letters
The removal of interfacial silicon dioxide due to the growth of HfO 2 by Hf deposition in an oxidizing ambient was investigated. The involvement of oxygen transport through HfO2 layer was shown by medium-energy ion scattering results. Oxygen vacancy reactions were held responsible for the temperature dependence of silica reduction.
R.M. Tromp, M. Mankos, et al.
Surface Review and Letters
A. Portavoce, M. Kammler, et al.
Materials Science in Semiconductor Processing
M. Horn-Von Hoegen, J. Falta, et al.
Applied Physics Letters
M. Copel, M.C. Reuter, et al.
Physical Review B