R.M. Tromp, F.M. Ross, et al.
Physical Review Letters
The removal of interfacial silicon dioxide due to the growth of HfO 2 by Hf deposition in an oxidizing ambient was investigated. The involvement of oxygen transport through HfO2 layer was shown by medium-energy ion scattering results. Oxygen vacancy reactions were held responsible for the temperature dependence of silica reduction.
R.M. Tromp, F.M. Ross, et al.
Physical Review Letters
S. Kodambaka, J. Tersoff, et al.
SPIE OPTO 2009
F.-J. Meyer Zu Heringdorf, M.C. Reuter, et al.
Applied Physics A: Materials Science and Processing
H. Kim, C. Lavoie, et al.
Journal of Applied Physics