Cyclotron resonance studies of two-dimensional holes in strained Si _1-xGe_x/Si quantum wells

Abstract

Far-infrared magnetotransmission spectroscopy has been employed to study p-type modulation-doped strained Si1-xGex/Si quantum wells grown by atmospheric pressure chemical vapor deposition at magnetic fields up to 23 T. The cyclotron resonance (CR) mass of the two-dimensional hole gas (2DHG) in a strained 7.5 nm Si0.63Ge0.37 quantum well was determined to be (0.29±0.02)m0 for a 2D hole density of 2.3×1012/cm2 at 3 K. The CR mass of 2DHGs in strained Si1-xGex is comparable to previous measurements of the CR mass of 2DHGs in strained InyGa1-yAs with similar 2D hole densities.