A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Electrical breakdown in GaAs Schottky diodes creates a granular filamentary structure of submicron dimensions between the contacts. The filament exhibits very fast (<2 nsec) electrical switching between stable resistance states. Irrespective of the contact metal, the filament becomes superconducting when in the low-resistance state. Electron transport in all the resistance states is intergrain tunneling between metallic inclusions and is governed by an activation energy. Switching is not based on metal transport. © 1975.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Revanth Kodoru, Atanu Saha, et al.
arXiv
T.N. Morgan
Semiconductor Science and Technology
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures