C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Studies of the wafer edge uniformity step by step, from hard mask deposition, reactive ion etch, electroplating to post Cu CMP had been done using scanning electron microscopy (SEM) measurements, showed that the major wafer non-uniformity comes from the Cu CMP step. Improvement of Cu CMP edge uniformity had been achieved through engineering of platen 1 (P1) using real time profile control as well as CMP head zone pressure adjustment and platen 3 (P3) slurry optimizations © 2010 Materials Research Society.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Eloisa Bentivegna
Big Data 2022
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989