The DX centre
T.N. Morgan
Semiconductor Science and Technology
The crystallization of ternary amorphous alloy thin films of Co(Si1-x Gex)2 with x ∼- 0.1 upon annealing to 300°C has been studied by in-situ resistivity measurement, X-ray diffraction and transmission electron microscopy combined with energy dispersive analysis. In the as-deposited state, the amorphous films are mixed with nanometer size crystals of Co(Si1-x Gex)2, which lowers the crystallization temperature as compared to that of amorphous CoSi2 alloys. A two-stage crystallization behavior of the ternary amorphous alloy has been observed. © 1992.
T.N. Morgan
Semiconductor Science and Technology
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications