Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
The crystallization of ternary amorphous alloy thin films of Co(Si1-x Gex)2 with x ∼- 0.1 upon annealing to 300°C has been studied by in-situ resistivity measurement, X-ray diffraction and transmission electron microscopy combined with energy dispersive analysis. In the as-deposited state, the amorphous films are mixed with nanometer size crystals of Co(Si1-x Gex)2, which lowers the crystallization temperature as compared to that of amorphous CoSi2 alloys. A two-stage crystallization behavior of the ternary amorphous alloy has been observed. © 1992.
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Imran Nasim, Melanie Weber
SCML 2024
A. Gangulee, F.M. D'Heurle
Thin Solid Films