Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot

Abstract

The production of single electron transistor in layered silicon/ silicon-germanium heterostructures, that included strained silicon quantum well containing two dimensional electron gas (2DEG) was investigated. The quantum dots were fabricated by ion etching and electron beam lithography. Coulomb blockade with single electron charging energy of 3.2meV was determined, when low temperature measurements were done. It was shown that the fabrication of smaller dots using etch defined gates allowed lower electron occupation of the dots.